ª

1998 Microchip Technology Inc.

Preliminary

DS21207B-page 1
M

93C66A/B

FEATURES

• Single supply 5.0V operation
• Low power CMOS technology
- 1 mA active current (typical)
-1

m

A standby current (maximum)
• 512x 8 bit organization (93C66A)
• 256x 16 bit organization (93C66B)
• Self-timed ERASE and WRITE cycles (including
auto-erase)
• Automatic ERAL before WRAL
• Power on/off data protection circuitry
• Industry standard 3-wire serial interface
• Device status signal during ERASE/WRITE
cycles
• Sequential READ function
• 100,000 E/W cycles guaranteed
• Data retention > 200 years
• 8-pin PDIP and SOIC packages
• Available for the following temperature ranges:

DESCRIPTION

The Microchip Technology Inc. 93C66A/B is a 4K-bit,
low-voltage serial Electrically Erasable PROM. The
device memory is configured as 512 x 8 bits (93C66A)
or 256 x 16 bits (93C66B). Advanced CMOS
technology makes this device ideal for low-power,
nonvolatile memory applications. The 93C66A/B is
available in standard 8-pin DIP and surface mount
SOIC packages.

This device is only recommended
for 5V automotive temperature applications. For all
commercial and industrial temperature applica-
tions, the 93LC66A/B is recommended.

PACKAGE TYPE
BLOCK DIAGRAM

- Automotive (E): -40



C to +125



C
93C66A/B
CS
CLK
DI
DO
1
2
3
4
8
7
6
5
VCC
NC
NC
VSS
CS
CLK
DI
DO
VCC
NC
NC
VSS
93C66A/B
SOIC
1
2
3
4
PDIP
8
7
6
5
VCC
VSS
DI
CS
CLK
DO
MEMORY
ARRAY
ADDRESS
DECODER
ADDRESS
COUNTER
DATA
REGISTER
OUTPUT
BUFFER
MEMORY
DECODE
LOGIC
CLOCK
GENERATOR

4K 5.0V Automotive Temperature Microwire

®

Serial EEPROM

Microwire is a registered trademark of National Semiconductor.