9014
器件描述:NPN SILICON TRANSISTOR
文件大小:27.43KB,共1页
器件资料摘要:
FEATURES
Power dissipation
P
CM
: 0.4 W Tamb=25
Collector current
I
CM
: 0.1 A
Collector-base voltage
V
(BR)CBO
: 50 V
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)
CBO
Ic= 100 A I
E
=0 50 V
Collector-emitter breakdown voltage V(BR)
CEO
Ic= 0. 1 mA I
B
=0 45 V
Emitter-base breakdown voltage V(BR)
EBO
I
E
= 100 A I
C
=0 5 V
Collector cut-off current I
CBO
V
CB
=50 V , I
E
=0 0.1 A
Collector cut-off current I
CEO
V
CE
=35 V , I
B
=0 0.1 A
Emitter cut-off current I
EBO
V
EB
= 3 V I
C
=0 0.1 A
DC current gain(note) H
FE 1
V
CE
= 5 V, I
C
= 1mA 60 1000
Collector-emitter saturation voltage V
CE
(sat) I
C
= 100mA, I
B
= 5 mA 0.3 V
Base-emitter saturation voltage V
BE
(sat) I
C
= 100 mA, I
B
= 5mA 1 V
Transition frequency f
T
V
CE
= 5 V, I
C
= 10mA
f =30MHz
150 MHz
CLASSIFICATION OF H
FE(1)
Rank ABCD
Range 60-150 100-300 200-600 400-1000
1 2 3
TO 92
1.EMITTER
2.BASE
3.COLLECTOR
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com