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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BCX38

器件描述:NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
器件厂商:ZETEX [Zetex Semiconductors]
厂商主页:http://www.zetex.com/
文件大小:61.83KB,共3页
Sponsor by e络盟
器件资料摘要:
NPN SI
LICON PLANAR MEDIUM
POW
E
R DARLINGT
ON TRANSISTORS
ISS
U
E 1
MA
RCH 94
FEATU
R
E
S
*
6
0

V
olt
V
CEO
*
G
ain of 10K at I
C
=
0
.5 Am
p
*P
to
t
=1 Watt
ABSOL
U
TE M
A
XI
M
U
M

RATI
NGS.
PA
RA
M
ETER
S
Y
M
B
O
L
V
A
L
U
E
U
N
I
T
Col
l
ec
t
o
r
-
B
as
e Vol
t
age
V
CBO
80
V
C
o
ll
e
c
t
o
r-E
m
i
tt
er V
o
lt
ag
e
V
CEO
60
V
Em
i
t
t
e
r-
B
a
se
Vo
l
t
age
V
EB
O
10
V
Peak Pu
l
s
e Cu
r
r
ent
I
CM
2A
C
o
nt
i
n
u
o
us C
o
l
l
ect
o
r
Cu
r
r
ent
I
C
800
m
A
Pow
er
D
i
ssi
pat
i
on at

T
am
b
=2
5

C
P
to
t
1W
O
p
er
a
t
i
n
g
and
St
or
age Tem
p
er
a
t
ur
e

R
a
ng
e
T
j
:T
st
g
-
55 t
o
+
200

C
EL
ECTRI
C
AL

CHARACTERI
STI
CS (
a
t

T
am
b
= 25 C)
.
PA
RA
M
ETER
S
Y
M
B
O
L
M
I
N
.
T
Y
P
.
M
A
X
.
U
N
I
T
C
O
N
D
I
TI
O
N
S
.
Col
l
ec
t
o
r
-
B
as
e
Br
eakdow
n V
o
l
t
ag
e
V
(B
R
)
C
B
O
80
V
I
C
=1
0
µ
A,
I
E
=0
C
o
ll
e
c
t
o
r-E
m
i
tt
er
Sus
t
ai
ni
n
g
Vo
l
t
age
V
CE
O(
s
u
s
)
60
V
I
C
=1
0m
A,
I
B
=0
E
m
itte
r
-
B
a
s
e
Br
eakdow
n V
o
l
t
ag
e
V
(
B
R
)
EBO
10
V
I
E
=10
µ
A,
I
C
=0
Co
l
l
ec
t
o
r
Cu
t
-
Of
f
Cu
r
r
e
nt
I
CB
O
10
0
n
A
V
CB
=60V,
I
E
=0
E
m
it
t
e
r C
u
t-
O
f
f
Cu
r
r
e
nt
I
EBO
10
0
n
A
V
EB
=8
V,
I
C
=0
C
o
ll
e
c
t
o
r-E
m
i
tt
er
S
a
tu
rati
o
n
V
o
lt
a
g
e
V
CE
(
s
a
t
)
1.
2
5
V
I
C
=
8
00m
A
,
I
B
=8
m
A
*
B
a
s
e
-E
m
i
tt
e
r

Tur
n-
on V
o
l
t
ag
e
V
BE
(
o
n
)
1.
8
V
I
C
=
8
00m
A
,
V
CE
=5
V*
St
at
i
c
For
w
ar
d
Cu
r
r
e
nt
Tr
ans
f
er
Ra
t
i
o
BCX3
8
A
h
FE
500 100
0
I
C
=
1
00m
A
,
V
CE
=5
V*
I
C
=
5
00m
A
,
V
CE
=5
V*
BCX3
8
B
200
0
400
0
I
C
=
1
00m
A
,
V
CE
=5
V*
I
C
=
5
00m
A
,
V
CE
=5
V*
BCX3
8
C
500
0
100
00
I
C
=
1
00m
A
,
V
CE
=5
V*
I
C
=
5
00m
A
,
V
CE
=5
V*
E-
Li
ne
TO
92 Co
m
p
at
i
b
l
e
C
B

E
BCX38A/B/C
3-20
BCX
38
A/B/C
0.
00
01
50
150 100
Pu
l
se W
i
dth

(seconds)
10
100
1
0.
1
0.
0
1
0.
00
1
0
D=
1 (D.
C
.
)
D=
0
.
5
D=
0
.
2
D=
0
.
1
S
in
g
le
P
u
ls
e
D=
0.
05
0.
00
1
0
.
0
1
0
.
1
1
0.
8
0.
2
1.
0
T
Y
PICAL C
HARACTE
R
I
ST
ICS
V
CE(sat)
v I
C

I
C
-
Colle
c
t
or Current
(
A
m
p
s
)

VCE(sat) - (Volts)
I
C
-
Colle
ct
o
r
Current
(
A
m
p
s
)

V
BE(s
a
t
)
v I
C

I
C
-
Colle
c
t
or Current
(
A
m
p
s
)

V
BE
(
o
n)
v I
C

VBE - (Volts)
VBE(sat) - (Volts)
0.
4
0.
00
1
0
.
0
1
0.
1
1
01.
0
0.
8
0.
6
0.
4
0.
2
1.
6
1.
4
1.
2
I
C
-
Co
l
l
e
c
t
or Current
(
A
m
p
s
)

h
FE
v I
C

hFE - Normalised Gain
10
1.
0
0.
5
2.
0
1.
5
V
CE
=5
V
I
C
/I
B
=100
10
Saf
e
Oper
at
i
n
g
A
r
ea
I C - Co l l e c to r Cur r e n t ( A m ps)
V
CE
-
Collector V
oltage (V
olts)
11
0
0
0
10
100
0.
0
1
0.
1
110
S
ingle Pu
l
s
e T
e
s
t

at

T
amb
=2
5
°
C
D.
C.


1s



1
0
0
m
s




10
m
s
1.
0m
s



0
.
1
m
s
0.
6 0.
00
1
0
.
0
1
0
.
1
1
1
0
I
C
/I
B
=100
1.
0
0.
5
2.
0
1.
5
0.
00
1
0
.
0
1
0
.
1
1
1
0
V
CE
=5V
-5
5
°
C
+2
5
°
C
+1
0
0
°
C
+1
7
5
°
C
-5
5
°
C
+2
5
°
C
+1
0
0
°
C
+1
7
5
°
C
-5
5
°
C
+2
5
°
C
+1
00°
C
-5
5
°
C
+25°
C
+100°
C
+175°
C
Ma
x
i
m
u
m

tr
a
n
s
i
en
t the
rm
a
l
im
pe
d
a
nc
e
T h e r m a l R esis ta nce ( °C/ W )
3-21