74VHC03
器件描述:QUAD 2-INPUT OPEN DRAIN NAND GATE
文件大小:54.51KB,共7页
Sponsor by e络盟
器件资料摘要:
74VHC03
QUAD 2-INPUT OPEN DRAIN NAND GATE
PRELIMINARY DATA
June 1999
n HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC =5V
n LOW POWER DISSIPATION:
ICC =2 µA (MAX.) at TA =25
o
C
n HIGH NOISE IMMUNITY:
VNIH =VNIL =28%VCC (MIN.)
n POWERDOWN PROTECTIONON INPUTS
n OPERATING VOLTAGE RANGE:
VCC (OPR)= 2V to 5.5V
n PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 03
n IMPROVED LATCH-UP IMMUNITY
n LOW NOISE: V
OLP
= 0.8V(Max.)
DESCRIPTION
The 74VHC03 is an advanced high-speed CMOS
QUAD 2-INPUT OPEN DRAIN NAND GATE
fabricated with sub-micron silicon gate and
double-layer metal wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provides high noise
immunity and stable output.
This device can, with an external pull-up resistor,
be used in wired AND configuration. This device
can also be used as a led driver and in any other
application requiring a current sink.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2kV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES :
74VHC03M 74VHC03T
M
(Micro Package)
T
(TSSOP Package)
1/7