2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
2N3390
2N3391
2N3391A
2N3392
2N3393
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 25 V
V
CBO
Collector-Base Voltage 25 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 500 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Symbol Characteristic Max Units
2N3390 / 3391/A / 3392 / 3393
PD Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
B
C
E
TO-92
 1997 Fairchild Semiconductor Corporation 3390-93, Rev B