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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

1N100

器件描述:Optimized for Radio Frequency Response
器件厂商:MICROSEMI [Microsemi Corporation]
文件大小:62.05KB,共1页
Sponsor by e络盟
器件资料摘要:
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
Absolute Maximum Ratings at T
amb
= 25
O
C unless otherwise specified
Parameter Symbols Min. Max. Units
Peak Inverse Voltage PIV -- 100 Volts
Peak Forward Surge Current Non-Repetitive, t = 1 Second I
FSM
0.4 Amps
Peak Forward Surge Current Repetitive I
FSR
250 mA
Average Rectified Forward Current I
O
70 mA
Operating Temperatures T
J & Op
-78 +90
O
C
Storage Temperatures T
J & STG
-78 +100
O
C
Electrical Characteristics at T
amb
= 25
O
C
Parameter Test Conditions Symbols Min. Typ. Max. Units
Forward Voltage Drop I
F
= 40mA V
F
1.0 Volts
Reverse Leakage V
R
= 5 Volts I
R
5 µA
Reverse Leakage V
R
= 50 Volts I
R
50 µA
Breakdown Voltage I
R
= 1.0mA PIV 100 Volts
Features
Lower leakage current
Flat junction capacitance
High mechanical strength
At least 1 million hours MTBF
BKC's Sigma-Bond™ plating for
problem free solderability
Applications
AM/FM detectors
Ratio detectors
FM discriminators
TV audio detectors
RF input probes
TV video detectors
Gold Bonded 1N100A Germanium Diodes
Optimized for Radio Frequency Response
Can be used in many AM, FM and TV-IF applications, replacing point contact devices.
1.0"
25.4 mm
(Min.)
DO-7 Glass Package

Dia
0.085-.107 "
2.16-2.71 mm
0.018-0.022"
0.458-.558 mm
Length
0.230-0.30"
5.85-7.62mm