74H1G66
器件描述:SINGLE BILATERAL SWITCH
文件大小:61.72KB,共8页
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器件资料摘要:
74H1G66
SINGLE BILATERAL SWITCH
February 2000
n HIGH SPEED: t
PD
= 4 ns (TYP.) at V
CC
=5V
n LOW POWER DISSIPATION:
ICC =1 µA (MAX.) at TA =25
o
C
n HIGH NOISE IMMUNITY:
VNIH =VNIL =28%VCC (MIN.)
n LOW ”ON” RESISTANCE
RON =50Ω(TYP.)AT VCC=9V II/O=100µA
n SINE WAVE DISTORTION
0.042%(TYP.) AT V
CC
=4V f=1KHz
n WIDE OPERATING VOLTAGERANGE:
V
CC
(OPR)= 2V to 12V
DESCRIPTION
The 74H1G66 is an high-speed CMOS SINGLE
BILATERAL SWITCH fabricated in silicon gate
C
2
MOS technology. It has high speed
performance combined with true CMOS low
power consumption.
The C input is provided to control the switch; the
switch is ON when the C input is held high and off
when C is held low.
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES :
74H1G66S
S
(SOT23-5L)
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