1
Item Symbol Rating Unit
Drain-source voltage VDS 60
Continuous drain current ID ±50
Pulsed drain current ID(puls] ±200
Gate-source voltage VGS ±30
Maximum Avalanche Energy EAV *1 720.8
Max. power dissipation PD 50
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK2903-01MR FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=60V
VGS=±30V
ID=40A VGS=10V
ID=40A VDS=25V
VCC=30V ID=80A
VGS=10V
RGS=10 W
Min. Typ. Max. Units
V
V
µA
mA
nA
mW
S
pF
A
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
2.5
62.5
°C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=10mA VDS=VGS
Tch=25°C
VGS=0V Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
L=100
µ
H Tch=25°C
IF=50A VGS=0V Tch=25°C
IF=50A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
A
A
V
mJ
W
°C
°C
*1 L=0.384mH, Vcc=24V
60
2.5 3.0 3.5
10 500
0.2 1.0
10 100
9.5 12
20 40
3100 4650
1300 1950
350 530
20 30
85 120
88 130
65 120
50
1.0 1.5
70
0.13
-55 to +150
TO-220F15
3. Source
2.54