2SK2874
器件资料摘要：
2SK2874-01L,S N-channel MOS-FET
FAP-IIS Series 500V 1,5Ω ±6A 50W
> Features > Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- V GS = ± 30V Guarantee
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V DS 500 V
Continous Drain Current I D ±6 A
Pulsed Drain Current I D(puls) ±24 A
Gate-Source-Voltage V GS ±35 V
Repetitive or Non-Repetitive (T ch ≤ 150°C) I AR 6 A
Avalanche Energy E AS 259.1 mJ
Max. Power Dissipation P D 50 W
Operating and Storage Temperature Range T ch 150 °C
T stg -55 ~ +150 °C
L=13.2mH,Vcc=50V
- Electrical Characteristics (T C =25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage BV DSS I D =1mA V GS =0V 500 V
Gate Threshhold Voltage V GS(th) I D =1mA V DS= V GS 3,5 4,0 4,5 V
Zero Gate Voltage Drain Current I DSS V DS =500V T ch =25°C 10 500 µA
V GS =0V T ch =125°C 0,2 1,0 mA
Gate Source Leakage Current I GSS V GS =±35V V DS =0V 10 100 nA
Drain Source On-State Resistance R DS(on) I D =3A V GS =10V 1,25 1,5 Ω
Forward Transconductance g fs I D =3A V DS =25V 2 4 S
Input Capacitance C iss V DS =25V 540 810 pF
Output Capacitance C oss V GS =0V 100 150 pF
Reverse Transfer Capacitance C rss f=1MHz 45 70 pF
Turn-On-Time t on ( t on =t d(on) +t r ) t d(on) V CC =300V 13 20 ns
t r I D =6A 40 60 ns
Turn-Off-Time t off (t on =t d(off) +t f ) t d(off) V GS =10V 30 45 ns
t f R GS =10 Ω 25 40 ns
Avalanche Capability I AV L = 13,2mH T ch =25°C 6 A
Diode Forward On-Voltage V SD I F =2xI DR V GS =0V T ch =25°C 1,0 1,50 V
Reverse Recovery Time t rr I F =I DR V GS =0V 450 ns
Reverse Recovery Charge Q rr -dI F /d t =100A/µs T ch =25°C 3,2 µC
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R th(ch-c) channel to case 2,5 °C/W
R th(ch-a) channel to air 125,0 °C/W
FAP-IIS Series 500V 1,5Ω ±6A 50W
> Features > Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- V GS = ± 30V Guarantee
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V DS 500 V
Continous Drain Current I D ±6 A
Pulsed Drain Current I D(puls) ±24 A
Gate-Source-Voltage V GS ±35 V
Repetitive or Non-Repetitive (T ch ≤ 150°C) I AR 6 A
Avalanche Energy E AS 259.1 mJ
Max. Power Dissipation P D 50 W
Operating and Storage Temperature Range T ch 150 °C
T stg -55 ~ +150 °C
L=13.2mH,Vcc=50V
- Electrical Characteristics (T C =25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage BV DSS I D =1mA V GS =0V 500 V
Gate Threshhold Voltage V GS(th) I D =1mA V DS= V GS 3,5 4,0 4,5 V
Zero Gate Voltage Drain Current I DSS V DS =500V T ch =25°C 10 500 µA
V GS =0V T ch =125°C 0,2 1,0 mA
Gate Source Leakage Current I GSS V GS =±35V V DS =0V 10 100 nA
Drain Source On-State Resistance R DS(on) I D =3A V GS =10V 1,25 1,5 Ω
Forward Transconductance g fs I D =3A V DS =25V 2 4 S
Input Capacitance C iss V DS =25V 540 810 pF
Output Capacitance C oss V GS =0V 100 150 pF
Reverse Transfer Capacitance C rss f=1MHz 45 70 pF
Turn-On-Time t on ( t on =t d(on) +t r ) t d(on) V CC =300V 13 20 ns
t r I D =6A 40 60 ns
Turn-Off-Time t off (t on =t d(off) +t f ) t d(off) V GS =10V 30 45 ns
t f R GS =10 Ω 25 40 ns
Avalanche Capability I AV L = 13,2mH T ch =25°C 6 A
Diode Forward On-Voltage V SD I F =2xI DR V GS =0V T ch =25°C 1,0 1,50 V
Reverse Recovery Time t rr I F =I DR V GS =0V 450 ns
Reverse Recovery Charge Q rr -dI F /d t =100A/µs T ch =25°C 3,2 µC
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R th(ch-c) channel to case 2,5 °C/W
R th(ch-a) channel to air 125,0 °C/W