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NOT FOR NEW DESIGN
November 2000
This is information on a product still in production but not recommended for new designs.
M27512
NMOS 512 Kbit (64Kb x 8) UV EPROM
a73 FAST ACCESS TIME: 200ns
a73 EXTENDED TEMPERATURE RANGE
a73 SINGLE 5V SUPPLY VOLTAGE
a73 LOW STANDBY CURRENT: 40mA max
a73 TTL COMPATIBLE DURING READ and
PROGRAM
a73 FAST PROGRAMMING ALGORITHM
a73 ELECTRONIC SIGNATURE
a73 PROGRAMMING VOLTAGE: 12V
DESCRIPTION
The M27512 is a 524,288 bit UV erasable and
electrically programmable memory EPROM. It is
organized as 65,536 words by 8 bits.
The M27512 is housed in a 28 Pin Window Ce-
ramic Frit-Seal Dual-in-Line package. The trans-
parent lid allows the user to expose the chip to
ultraviolet light to erase the bit pattern. A new pat-
tern can then be written to the device by following
the programming procedure.
Figure 1. Logic Diagram
AI00765B
16
Q0-Q7
V
CC
M27512
GV
PP
V
SS
8
A0-A15
E
1
28
FDIP28W (F)