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3/19/02
IRF7413
SMPS MOSFET
HEXFET
G174
G32Power MOSFET
G108 High frequency DC-DC converters
Benefits
Applications
G108 Low Gate to Drain Charge to Reduce
Switching Losses
G108 Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
G108 Fully Characterized Avalanche Voltage
and Current
Parameter Max. Units
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 12
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 9.6 A
I
DM
Pulsed Drain Current G129 96
P
D
@T
A
= 25°C Power DissipationG132 2.5 W
Linear Derating Factor 0.02 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt G134 1.0 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
NotesG32G129G32through G134 are on page 8
SO-8
Top View
81
2
3
4 5
6
7
D
D
D
DG
S
A
S
S
A
V
DSS
R
DS(on)
max(mG87G41 I
D

30V 11@V
GS
= 10V 12A
Symbol Parameter Typ. Max. Units
R
θJL
Junction-to-Drain Lead ––– 20
R
θJA
Junction-to-Ambient G132 ––– 50 °C/W
Thermal Resistance
G80G68G45G32G57G49G51G51G48G70