FEATURES
C0068 TrenchFETC0114 Power MOSFETS
C0068 New Low Thermal Resistance PowerPAKC0114
Package with Low 1.07-mm Profile
APPLICATIONS
C0068 Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
Si7459DP
Vishay Siliconix
New Product
Document Number: 72631
S-32678—Rev. A, 29-Dec-03
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V) r
DS(on)
(C0087) I
D
(A)
-30 0.0068 @ V
GS
= -10 V
-22
D
S
G
P-Channel MOSFET
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm 5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information: Si7459DP-T1 - E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C0095C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V
DS
-30
V
Gate-Source Voltage V
GS C003425
Continuous Drain Current (T
J
= 150C0095C)
a
T
A
= 25C0095C
I
D
-22
-13
Continuous Drain Current
T
A
= 70C0095C -17 -10
A
Pulsed Drain Current I
DM
-60
continuous Source Current (Diode Conduction)
a
I
S
-4.5 -1.6
Maximum Power Dissipation
a
T
A
= 25C0095C
P
D
5.4 1.9
W
T
A
= 70C0095C 3.4 1.2
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to 150 C0095C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction to Ambient
a
t C0118 10 sec
R
18 23
Maximum Junction-to-Ambient
Steady State
thJA
52 65 C0095C/W
Maximum Junction-to-Case (Drain) Steady State R
thJC
1.0 1.5
Notes
a. Surface Mounted on 1” x 1” FR4 Board.