MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
3 - 12
Single Channel Optocoupler
66116 Electrically Similar to 4N47-4N49
Coaxial or Bulkhead Mount packages
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
• High reliability
• Base lead provided for conventional transistor
biasing
• Very high gain, high voltage transistor
• Hermetically sealed for reliability and stability
• Stability over wide temperature range
• High voltage electrical isolation


Applications:

• Line Receivers
• Switchmode Power Supplies
• Signal ground isolation
• Process Control input/output isolation
DESCRIPTION
Very high gain optocoupler utilizing GaAIAs infrared LED optically coupled to an N-P-N silicon phototransistor packaged in a
hermetically sealed metal case. These devices can be tested to customer specifications, as well as to MIL-PRF-38534 H&K
quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage........................................................................................................................................................ ±1kV
Collector-Base Voltage ...........................................................................................................................................................45V
Collector-Emitter Voltage (See Note 1) ..................................................................................................................................40V
Emitter-Base Voltage................................................................................................................................................................7V
Input Diode Reverse Voltage....................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 2) ....................................40mA
Continuous Collector Current ..............................................................................................................................................50mA
Peak Diode Current (See Note 3).............................................................................................................................................1A
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 4) ................................300mW
Operating Free-Air Temperature Range ............................................................................................................-55°C to +125°C
Storage Temperature..........................................................................................................................................-65°C to +125°C
Lead Temperature (1/16” (1.6mm) from case for 10 seconds).......................................................................................... 240°C
* JEDEC registered data
Package Dimensions Schematic Diagram
Case Lead
Emitter
Base
ANODE
CATHODE
Collector
Case Lead
E
B
K
C
A
Notes:
1. This value applies with the emitter-base diode open-circuited and the input-diode current equal to zero.
2. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C.
3. This value applies for t
w
≤1us. PRR<300 pps.
4. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.