Integrated Silicon Solution, Inc. — 1-800-379-4774 1
SR072-1E
05/12/99
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
FEATURES
• Access time: 45, 70 ns
• Low active power: 200 mW (typical)
• Low standby power
— 250 m W (typical) CMOS standby
— 28 mW (typical) TTL standby
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V power supply
DESCRIPTION
The ISSI IS62C256 is a low power, 32,768 word by 8-bit
CMOS static RAM. It is fabricated using ISSI's high-
performance, low power CMOS technology.
When CS is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down to
250 m W (typical) at CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Select (CS) input and an active LOW Output Enable (OE)
input. The active LOW Write Enable (WE) controls both writing
and reading of the memory.
The IS62C256 is pin compatible with other 32K x 8 SRAMs in
plastic SOP or TSOP (Type I) package.
IS62C256
32K x 8 LOW POWER CMOS STATIC RAM
FUNCTIONAL BLOCK DIAGRAM
A0-A14
CS
OE
WE
32K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
ISSI
®