IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 800 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 800 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C6A
DM
T
C
= 25°C, pulse width limited by T
JM
24 A
P
D
T
C
= 25°C 180 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD (IXTH)
Standard
Power MOSFET
N-Channel Enhancement Mode
TO-204 AA (IXTM)
V
DSS
I
D25
R
DS(on)
IXTH/IXTM 6 N80 800 V 6 A 1.8 Ω
IXTH/IXTM 6 N80A 800 V 6 A 1.4 Ω
G = Gate, D = Drain,
S = Source, TAB = Drain
G
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA 800 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 2 4.5 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= 0.8 • V
DSS
T
J
= 25°C 250 µA
V
GS
= 0 V T
J
= 125°C1m
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
6N80 1.8 Ω
6N80A 1.4 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Features
a71
International standard packages
a71
Low R
DS (on)
HDMOS
TM
process
a71
Rugged polysilicon gate cell structure
a71
Low package inductance (< 5 nH)
- easy to drive and to protect
a71
Fast switching times
Applications
a71
Switch-mode and resonant-mode
power supplies
a71
Motor controls
a71
Uninterruptible Power Supplies (UPS)
a71
DC choppers
Advantages
a71
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
a71
Space savings
a71
High power density
91542E(5/96)
D (TAB)