6MBI 50S-120L 6-Pack IGBT 1200V 6x50A
IGBT MODULE ( S-Series )
n Features
• NPT-Technologie
• Solderable Package
• Square SC SOA at 10 x I C
• High Short Circuit Withstand-Capability
• Small Temperature Dependence of the Turn-Off
Switching Loss
• Low Losses And Soft Switching
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Outline Drawing
n Maximum Ratings and Characteristics n Equivalent Circuit
• Absolute Maximum Ratings ( T c =25°C )
Items Symbols Ratings Units
Collector-Emitter Voltage V CES 1200 V
Gate -Emitter Voltage V GES ± 20 V
Continuous I C 75 / 50
Collector 1ms I C PULSE 150 / 100
Current (25°C / 80°C) Continuous -I C 75 / 50
1ms -I C PULSE 150 / 100
Max. Power Dissipation P C 350 W
Operating Temperature T j +150 °C
Storage Temperature T stg -40 ∼ +125 °C
Isolation Voltage A.C. 1min. V is 2500 V
Screw Torque Mounting *1 3.5 Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
• Electrical Characteristics ( at T j =25°C )
Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current I CES V GE =0V V CE =1200V 1.0 mA
Gate-Emitter Leackage Current I GES V CE =0V V GE = ± 20V 200 µ A
Gate-Emitter Threshold Voltage V GE(th) V GE =20V I C =50mA 6.0 9.0 V
Collector-Emitter Saturation Voltage V CE(sat) V GE =15V I C =50A 2.1 V
Input capacitance C ies V GE =0V 6000
Output capacitance C oes V CE =10V pF
Reverse Transfer capacitance C res f=1MHz
t ON V CC =600V 0.60 1.2
t r I C =50A 0.40 0.6
t OFF V GE = ± 15V 0.45 1.0
t f R G =24 Ω 0.10 0.3
Diode Forward On-Voltage V F I F =50A V GE =0V 3.3 V
Reverse Recovery Time t rr I F =50A 350 ns
• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
R th(j-c) IGBT 0.35
Thermal Resistance R th(j-c) Diode 0.70 °C/W
R th(c-f) With Thermal Compound 0.05
Turn-on Time
Turn-off Time
µ s
A