IGBT MODULE ( Single-in-Line )
n Features
• Square RBSOA
• Low Saturation Voltage
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
n Outline Drawing
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings ( T c =25°C )
Items Symbols Ratings Units
Collector-Emitter Voltage V CES 600 V
Gate -Emitter Voltage V GES ± 20 V
Continuous I C 10
Collector 1ms I C PULSE 20
Current Continuous -I C 10
1ms -I C PULSE 20
Max. Power Dissipation P C 45 W
Operating Temperature T j +150 °C
Storage Temperature T stg -40 ∼ +125 °C
Isolation Voltage A.C. 1min. V is 2000 V
Screw Torque Mounting *1 1.7 Nm
Note: *1:Recommendable Value; 1.3 ∼ 1.7 Nm (M4)
• Electrical Characteristics ( at T j =25°C )
Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current I CES V GE =0V V CE =600V 1.0 mA
Gate-Emitter Leackage Current I GES V CE =0V V GE = ± 20V 100 nA
Gate-Emitter Threshold Voltage V GE(th) V GE =20V I C =10mA 5.5 8.5 V
Collector-Emitter Saturation Voltage V CE(sat) V GE =15V I C =10A 2.8 V
Input capacitance C ies V GE =0V 650
Output capacitance C oes V CE =10V 150 pF
Reverse Transfer capacitance C res f=1MHz 36
t ON V CC =300V 1.2
t r I C =10A 1.0
t OFF V GE = ± 15V 1.0
t f R G =220 Ω 0.35
Diode Forward On-Voltage V F I F =10A V GE =0V 3.0 V
Reverse Recovery Time t rr I F =10A 300 ns
• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
R th(j-c) IGBT 2.78
Thermal Resistance R th(j-c) Diode 4.50 °C/W
R th(c-f) With Thermal Compound 0.06
n Equivalent Circuit
Turn-on Time
Turn-off Time
µ s
A