PRODUCT SELECTION GUIDE
PARAMETER 57C51C-35 57C51C-45 57C51C-55 57C51C-70
Address Access Time (Max) 35 ns 45 ns 55 ns 70 ns
CS to Output Valid Time (Max) 20 ns 20 ns 25 ns 30 ns
WS57C51C
2-47
HIGH SPEED 16K x 8 CMOS PROM/RPROM
KEY FEATURES
• Very Fast Access Time • Pin Compatible with Am27S51
— 35 ns
and N82HS1281
• Low Power Consumption • Immune to Latch-Up
• Fast Programming
— Up to 200 mA
• ESD Protection Exceeds 2000 V
GENERAL DESCRIPTION
The WS57C51C is a High Performance 128K UV Erasable Electrically Re-Programmable Read Only Memory
(RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM
speeds while consuming only 25% of the power required by its Bipolar counterparts.
A further advantage of the WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM
technology. This enables the entire memory array to be tested for switching characteristics and functionality after
assembly. Unlike devices which cannot be erased, every WS5751C in a windowed package is 100% tested with
worst case test patterns both before and after assembly.
The WS57C51C provides a low power alternative to those designs which are committed to a Bipolar PROM
footprint. It is a direct drop-in replacement for a Bipolar PROM of the same architecture (16K x 8). No software,
hardware or layout changes need be performed.
V
CC
A
10
A
11
A
12
A
13
CS1/V
PP
CS2
CS3
CS4
O
7
O
6
O
5
O
4
O
3
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A
12
A
13
CS1/V
PP
CS2
CS3
CS4
NC
O
7
O
6
A
5
A
4
A
3
A
2
A
1
A
0
NC
O
0
O
1
A
6
A
7
A
8
A
9
V
CC
A
10
A
11
O
2
NC

O
3
NC

O
4
O
5
1
432 32 31 30
29
28
27
26
25
24
23
22
21
5
6
7
8
9
10
11
12
13
14 15 16 17 18 19 20
GND
TOP VIEW
Chip Carrier CERDIP
PIN CONFIGURATION
ROW
DECODER
EPROM ARRAY
131,072 BITS
COLUMN
DECODER
SENSE
AMPLIFIERS
8
CS3
CS4
OUTPUTS
CS1/ VPP
A0 - A5
COLUMN
ADDRESSES
A6 - A13
ROW
ADDRESSES
8
6
CS2
BLOCK DIAGRAM
Return to Main Menu