547B
器件描述:NPN Silicon Amplifier Transistor 625mW
文件大小:1240.71KB,共4页
Sponsor by e络盟
器件资料摘要:
Features
l Through Hole Package
l 150
o
C Junction Temperature
Mechanical Data
l Case: TO-92, Molded Plastic
l Polarity: indicated as above.
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic Symbol Value Unit
Collector-Emitter Voltage BC546
BC547
BC548
V
CEO
65
45
30
V
Collector-Base Voltage BC546
BC547
BC548
V
CBO
80
50
30
V
Emitter-Base Voltage V
EBO
6.0 V
Collector Current(DC) I
C
100 mA
Power Dissipation@T
A
=25
o
C P
d
625
5.0
mW
mW/
o
C
Power Dissipation@T
C
=25
o
C P
d
1.5
12
W
mW/
o
C
Thermal Resistance, Junction to
Ambient Air
200
o
C/W
Thermal Resistance, Junction to
Case
83.3
o
C/W
Operating & Storage Temperature T
j
, T
STG
-55~150
o
C
BC546,B
BC547,A,B,C
BC548,A,B,C
NPN Silicon
Amplifier Transistor
625mW
Pin Configuration
Bottom View C B E
www.mccsemi.com
R
C0113JC
R
C0113JA
TO-92
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.46 4.70
C .500 --- 12.7 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
G .095 .105 2.42 2.67
A E
B
C
D
G
DIMENSIONS
G01G02G03G04G05G06G07G05G08G08G09G04G03G02G0AG0BG06G07omponents
21201 Itasca Street Chatsworth
G07G18G06G19G0FG1AG0FG0F
G1BG15G05G1CG09G1DG06G1EG1FG0FG1FG20G06G21G10G0FG22G23G19G1AG1A
G24G0AG25G1DG06G06G06G1EG1FG0FG1FG20G06G21G10G0FG22G23G19G1AG19
MCC