MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2462 is N-Channel MOS Field Effect Transistor de-
signed for high current switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 0.14 Ω MAX. (@ VGS = 10 V, ID = 8.0 A)
RDS(on)2 = 0.17 Ω MAX. (@ VGS = 4 V, ID = 8.0 A)
• Low Ciss Ciss = 790 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 100 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±15 A
Drain Current (pulse)* ID(pulse) ±60 A
Total Power Dissipation (Tc = 25 ˚C) PT1 30 W
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** IAS 15 A
Single Avalanche Energy** EAS 22.5 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2462
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10031EJ1V0DS00
Date Published May 1995 P
Printed in Japan
© 1995
DATA SHEET
Drain
Source
Body
Diode
Gate
Gate Protection
Diode
MP-45F(ISOLATED TO-220)
10.0 ±0.3
3.2 ±0.2
4.5 ±0.2
2.7 ±0.2
15.0 ±0.3
3 ±0.1
12.0 ±0.2
13.5
MIN.
4 ±0.2
1.3 ±0.2
1.5 ±0.2
2.542.54
0.7 ±0.1
0.65 ±0.1
2.5 ±0.1
123
1. Gate
2. Drain
3. Source
PACKAGE DIMENSIONS
(in millimeters)
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is
externally required if a voltage exceeding rated voltage may
be applied to this device.