DESCRIPTION
The 4N39 and 4N40 have a gallium-arsenide infrared
emitting diode optically coupled with a light activated sil-
icon controlled rectifier in a dual in-line package.
PHOTO SCR OPTOCOUPLERS
4N39 4N40
APPLICATIONS
• Low power logic circuits
• Telecommunications equipment
• Portable electronics
• Solid state relays
• Interfacing coupling systems of different potentials and impedances.
FEATURES
• 10 A, T
2
L compatible, solid state relay
• 25 W logic indicator lamp driver
• 400 V symmetrical transistor coupler
• Underwriters Laboratory (UL) recognized  File #E90700
6
1
6
1
6
1
CATHODE
ANODE
1
2
3
ANODE
CATHODE
4
5
6 GATE
N/C
SCHEMATIC
Parameter Symbol Device Value Units
TOTAL DEVICE
T
STG
All -55 to +150 °C
*Storage Temperature
*Operating Temperature T
OPR
All -55 to +100 °C
*Lead Solder Temperature T
SOL
All 260 for 10 sec °C
*Total Device Power Dissipation (-55°C to 50 °C)
P
D
All
450 mW
Derate above 50°C 9.0 mW/°C
EMITTER
I
F
All 60 mA
*Continuous Forward Current
*Reverse Voltage V
R
All 6 V
*Forward Current - Peak (300 µs, 2% Duty Cycle) I
F
(pk) All 1.0 A
*LED Power Dissipation (-55°C to 50 °C)
P
D
All
100 mW
Derate above 50°C 2.0 mW/°C
DETECTOR
*Off-State And Reverse Voltage
4N39 200 V
4N40 400 V
*Peak Reverse Gate Voltage 6V
*Direct On-State Current 300 mA
*Surge On-State Current (100 µs) 10 A
*Peak Gate Current 10 mA
*Detector Power Dissipation (-55°C to 50°C)
P
D
All
400 mW
Derate above 50°C 8.0 mW/°C
 2001 Fairchild Semiconductor Corporation
DS300381 2/27/01 1 OF 8 www.fairchildsemi.com
Note
* Indicates JEDEC Registered Data
** Typical values at T
A
= 25°C