5–36

Characteristics

(T

A

=25



C)

Sym-
bol
Min. Typ
.
Max
.
Unit Condition
Emitter

Forward Voltage V

F

1.2 1.5 V I

F

=20 mA
Reverse Current I

R

10

m

AV
R
=5 V

Detector

Forward Blocking


Voltage
V

DM

200 V

R

GK

=10 K

W

T

A

=100



C

I
d
=150

m

A
Reverse Blocking


Voltage
V

RM

200 V
On-state Voltage

V
TM

1.2 V I

TM

=300 mA
Holding Current I

H

200

m

AR
GK

=27 K

W

V

FX

=50 V
Gate Trigger
Voltage
V

GT

0.6 1.0 V V

FX

=100 V
R

GK

=27 K

W

R

L

=10 K

W

Forward Leakage





Current
I

DM

50

m

AR
GK

=10 K

W

V

RX

=200 V
I

F

=0,
T

A

=100



C
Reverse Leakage
Current
I

RM

50

m

AR
GK

=27 K

W

V

RX

=200 V
I

F

=0,
T

A

=100



C

Package

Turn-0n Current I

FT

15 30 mA V

FX

=50 V
R

GK

=10 K

W

814 V
FX

=100 V
R

GK

=27 K

W

Isolation Capaci-
tance
2 pF f=1 MHz
Package Dimensions in Inches (mm)
1
2
3
6
5
4
Gate
Anode
Cathode
Anode
Cathode
NC
.010 (.25)
.014 (.35)
.110 (2.79)
.150 (3.81)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
min.
.018 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
Pin One ID.
654
123
18° typ.
.300 (7.62)
.347 (8.82)
4°
typ.

FEATURES
• Turn On Current (I

FT

), 5.0 mA Typical
• Gate Trigger Current (I

GT

), 20 mA
• Surge Anode Current, 10 Amp
• Blocking Voltage, 200 VAC

PK


• Gate Trigger Voltage (V

GT

), 0.6 Volt
• Isolation Voltage, 5300 VAC

RMS

• Solid State Reliability
• Standard DIP Package
• Underwriters Lab File #E52744
DESCRIPTION

The 4N39 is an optically coupled SCR with a Gal-
lium Arsenide infrared emitter and a silicon photo
SCR sensor. Switching can be achieved while
maintaining a high degree of isolation between
triggering and load circuits. The 4N39 can be used
in SCR triac and solid state relay applications
where high blocking voltages and low input current
sensitivity are required.

Maximum Ratings
Emitter

Peak Reverse Voltage ....................................6.0 V
Peak Forward Current
(100

m

s, 1% Duty Cycle)............................. 1.0 A
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25



C..........................100 mW
Derate Linearly from 50



C.........................2 mW/



C

Detector

Reverse Gate Voltage .....................................6.0 V
Anode Peak Blocking Voltage .......................200 V
Peak Reverse Gate Voltage ...............................6 V
Anode Current............................................ 300 mA
Surge Anode Current (100

m

s duration).......... 10 A
Surge Gate Current (5 ms duration)........... 100 mA
Power Dissipation, 25



C ambient ..............400 mW
Derate Linearly from 25



C.........................8 mW/



C

Package

Isolation Test Voltage (1 sec.) .......... 5300 VAC

RMS

Isolation Resistance
V

IO

=500 V, T

A

=25



C ...............................

‡

10

12



W

V

IO

=500 V, T

A

=100



C .............................

‡

10

11



W

Total Package Dissipation ..........................450 mW
Derate Linearly from 50



C.........................9 mW/



C
Operating Temperature ................–55



C to +100



C
Storage Temperature....................–55



C to +150



C
Soldering Temperature (10 s.).......................260



C

4N39

PHOTO SCR OPTOCOUPLER