4N35
器件资料摘要：
1Motorola Optoelectronics Device Data
C0054C0045C0080C0105C0110 C0068C0073C0080 C0079C0112C0116C0111C0105C0115C0111C0108C0097C0116C0111C0114C0115
C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114 C0079C0117C0116C0112C0117C0116
The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon phototransistor detector.
• Current Transfer Ratio — 100% Minimum @ Specified Conditions
• Guaranteed Switching Speeds
• Meets or Exceeds all JEDEC Registered Specifications
• To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
• General Purpose Switching Circuits
• Interfacing and coupling systems of different potentials and impedances
• Regulation Feedback Circuits
• Monitor & Detection Circuits
• Solid State Relays
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating Symbol Value Unit
INPUT LED
Reverse Voltage V
R
6 Volts
Forward Current — Continuous I
F
60 mA
LED Power Dissipation @ T
A
= 25°C
with Negligible Power in Output Detector
Derate above 25°C
P
D
120
1.41
mW
mW/°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage V
CEO
30 Volts
Emitter–Base Voltage V
EBO
7 Volts
Collector–Base Voltage V
CBO
70 Volts
Collector Current — Continuous I
C
150 mA
Detector Power Dissipation @ T
A
= 25°C
with Negligible Power in Input LED
Derate above 25°C
P
D
150
1.76
mW
mW/°C
TOTAL DEVICE
Isolation Source Voltage
(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
V
ISO
7500 Vac(pk)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
250
2.94
mW
mW/°C
Ambient Operating Temperature Range
(2)
T
A
–55 to +100 °C
Storage Temperature Range
(2)
T
stg
–55 to +150 °C
Soldering Temperature (10 sec, 1/16″ from case) T
L
260 °C
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
Order this document
by 4N35/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
GlobalOptoisolator
Motorola, Inc. 1995
C0052C0078C0051C0053
C0052C0078C0051C0054
C0052C0078C0051C0055
*Motorola Preferred Device
C0042
SCHEMATIC
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
[CTR = 100% Min]
STANDARD THRU HOLE
CASE 730A–04
STYLE 1 PLASTIC
1
2
3
6
5
4
6
1
REV 2
C0054C0045C0080C0105C0110 C0068C0073C0080 C0079C0112C0116C0111C0105C0115C0111C0108C0097C0116C0111C0114C0115
C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114 C0079C0117C0116C0112C0117C0116
The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon phototransistor detector.
• Current Transfer Ratio — 100% Minimum @ Specified Conditions
• Guaranteed Switching Speeds
• Meets or Exceeds all JEDEC Registered Specifications
• To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
• General Purpose Switching Circuits
• Interfacing and coupling systems of different potentials and impedances
• Regulation Feedback Circuits
• Monitor & Detection Circuits
• Solid State Relays
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating Symbol Value Unit
INPUT LED
Reverse Voltage V
R
6 Volts
Forward Current — Continuous I
F
60 mA
LED Power Dissipation @ T
A
= 25°C
with Negligible Power in Output Detector
Derate above 25°C
P
D
120
1.41
mW
mW/°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage V
CEO
30 Volts
Emitter–Base Voltage V
EBO
7 Volts
Collector–Base Voltage V
CBO
70 Volts
Collector Current — Continuous I
C
150 mA
Detector Power Dissipation @ T
A
= 25°C
with Negligible Power in Input LED
Derate above 25°C
P
D
150
1.76
mW
mW/°C
TOTAL DEVICE
Isolation Source Voltage
(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
V
ISO
7500 Vac(pk)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
250
2.94
mW
mW/°C
Ambient Operating Temperature Range
(2)
T
A
–55 to +100 °C
Storage Temperature Range
(2)
T
stg
–55 to +150 °C
Soldering Temperature (10 sec, 1/16″ from case) T
L
260 °C
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
Order this document
by 4N35/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
GlobalOptoisolator
Motorola, Inc. 1995
C0052C0078C0051C0053
C0052C0078C0051C0054
C0052C0078C0051C0055
*Motorola Preferred Device
C0042
SCHEMATIC
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
[CTR = 100% Min]
STANDARD THRU HOLE
CASE 730A–04
STYLE 1 PLASTIC
1
2
3
6
5
4
6
1
REV 2