5–1

FEATURES
• Very High Current Transfer Ratio, 500% Min.
• High Isolation Resistance, 10

11

W

Typical
• Standard Plastic DIP Package
• Underwriters Lab File #E52744
• VDE Approvals #0884 (Available with
Option 1)
DESCRIPTION

The 4N32 and 4N33 are optically coupled isolators
with a Gallium Arsenide infrared LED and a silicon
photodarlington sensor. Switching can be
achieved while maintaining a high degree of isola-
tion between driving and load circuits. These opto-
couplers can be used to replace reed and mercury
relays with advantages of long life, high speed
switching and elimination of magnetic fields.

Maximum Ratings
Emitter

Peak Reverse Voltage ........................................3 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25



C..........................100 mW
Derate Linearly from 55



C....................1.33 mW/



C

Detector

Collector-Emitter Breakdown Voltage,
BV

CEO

.......................................................... 30 V
Emitter-Base Breakdown Voltage,
BV

EBO

............................................................. 8V
Collector-Base Breakdown Voltage,
BV

CBO

.......................................................... 50 V
Emiter-Collector Breakdown Voltage,
BV

ECO

............................................................ 5 V
Collector (load) Current...............................125 mA
Power Dissipation at 25



C Ambient ...........150 mW
Derate Linearly from 25



C......................2.0 mW/



C

Package

Total Dissipation at 25



C Ambient .............250 mW
Derate Linearly from 25



C......................3.3 mW/



C
Isolation Test Voltage.........................5300 VAC

RMS

Between Emitter and Detector,
Standard Climate: 23



C/50%RH,
DIN 50014
Leakage Path ........................................ 7 mm min.
Air Path................................................... 7 mm min.
Isolation Resitance
V

IO

=500 V/25



C......................................

‡

10

12

W

V

IO

=500 V/100



C....................................

‡

10

11

W

Storage Temperature ...................–55



C to +150



C
Operating Temperature ...............–55



C to +100



C
Lead Soldering Time at 260



C.................... 10 sec.
V
DE


Electrical Characteristics

(T

A

=25



C)

*Indicates JEDEC registered values

Parameter Min. Typ. Max. Unit Condition
Emitter

Forward Voltage 1.25 1.5 V I

F

=50 mA
Reverse Current 0.1 100

m

AV
R
=3.0 V
Capacitance 25 pF V

R

=0 V

Detector

BV

CEO

*30 VI
C
=100

m

A, I

F

=0
BV

CBO

*5 =100

m

A, I

F

=0
BV

EBO

*8 VI
C
=100

m

A, I

F

=0
BV

ECO

*510
E
=100

m

A, I

F

=0
I

CEO

1.0 100 nA V

CE

=10 V, I

F

=0
H

FE

13K I

C

=0.5 mA

Package

Current Transfer Ratio 500 % I

F

=10 mA,
V

CE

=10 V
V

CEsat

1.0 V I

C

=2 mA,
I

F

=8 mA
Coupling Capacitance 1.5 pF
Turn On Time 5

m

sV
CC

=10 V,
I

C

=50 mA
Turn Off Time 100

m

sI
F
=200mA,
R

L

=180

W
Dimensions in inches (mm)
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
.010 (.25)
.014 (.35)
.110 (2.79)
.150 (3.81)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
min.
.018 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
Pin One ID.
654
123
18° typ.
.300 (7.62)
.347 (8.82)
4°
typ.

4N32/4N33

PHOTODARLINGTON
OPTOCOUPLER