4AK25
器件描述：Silicon N-Channel Power MOS FET Array
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：39.86KB，共6页
Sponsor by e络盟器件资料摘要：
4AK25
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R
DS(on)
0.45 , V
GS
= 10 V, I
D
= 1 A
• Low drive current
• High speed switching
• High density mounting
Outline
SP-10
2 G
1 S
4
G
6
G
8
G
3
D
5
D
7
D
9
D
S 10
1, 10. Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
1
2
3
4
5
6
7
8
9
10
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R
DS(on)
0.45 , V
GS
= 10 V, I
D
= 1 A
• Low drive current
• High speed switching
• High density mounting
Outline
SP-10
2 G
1 S
4
G
6
G
8
G
3
D
5
D
7
D
9
D
S 10
1, 10. Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
1
2
3
4
5
6
7
8
9
10