4AK23
器件描述：Silicon N-Channel Power MOS FET Array
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：40.08KB，共6页
Sponsor by e络盟器件资料摘要：
4AK23
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R
DS(on)
0.25 , V
GS
= 10 V, I
D
= 2.5 A
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
Outline
SP-12TA
1
G
S 3
5
G
8
G
12
G
2
D
4
D
9
D
11
D
S 6 S 7 S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
1
2
3
4
5
6
7
8
9
11
10
12
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R
DS(on)
0.25 , V
GS
= 10 V, I
D
= 2.5 A
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
Outline
SP-12TA
1
G
S 3
5
G
8
G
12
G
2
D
4
D
9
D
11
D
S 6 S 7 S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
1
2
3
4
5
6
7
8
9
11
10
12