PRODUCT INFORMATION
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840nm
4D470
PIN Array
Parallel Datacom, Telecom
13628.11 1999-01-13
CATHODE
CATHODE
FRONT VIEW
ANODES
METAL SHIELD
METAL SHIELD
HEAT SINK MT GUIDE PINS
LEADS
SIDE VIEW
PIN Array in MT Package
All dimensions in mm
Optical and Electrical Characteristics (25° C Case Temperature)
Test Condition: V
R
=3.3V or 5V. Fiber Ribbon: 50/125 GI, NA=0.2 or 62.5/125 GI, NA=0.275.
Note 1: Crosstalk between adjacent channels operating at 2GHz.
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION
Responsivity R 0.45 A/W l=850nm
Bandwidth (3dB
el
) f
c
2 GHz R
L
=50V
Capacitance C 1 pF f=1MHz
Dark Current I
d
0.4 nA
Crosstalk X -30 dB
el
l=850nm (Note 1)
Absolute Maximum Ratings
Thermal Characteristics
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Temperature Coefficient - Dark Current dI
d
/dT
j
5%/8C
PARAMETER SYMBOL LIMIT
Storage Temperature T
stg
-40 to +858C
Operating Temperature T
op
0 to +708C
Reverse Voltage V
R
20V
Soldering Temperature (2mm from the case for 10 sec) T
sld
2608C
This device consists of a 4-channel PIN
Photodiode array in a miniature sur-
face-mountable MT package. It is
based on a unique combination of self-
alignment technology and direct opti-
cal coupling to fiber, resulting in opti-
mum coupling efficiency without need
for active alignment. Applications
include parallel Fibre Channel and
optical interconnect inter/intra-board.
And it matches the 4D469 VCSEL
Array.
PRELIMINAR
Y
/
b
The cathode is connected to the metal shield