4AK20
器件描述：Silicon N-Channel Power MOS FET Array
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：36.8KB，共6页
Sponsor by e络盟器件资料摘要：
4AK20
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R
DS(on)
0.25 , V
GS
= 10 V, I
D
= 2.5 A
R
DS(on)
0.35 , V
GS
= 4 V, I
D
= 2.5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver, solenoid driver and lamp driver
• Discrete packaged devices of same die: 2SK1300, 2SK1305
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R
DS(on)
0.25 , V
GS
= 10 V, I
D
= 2.5 A
R
DS(on)
0.35 , V
GS
= 4 V, I
D
= 2.5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver, solenoid driver and lamp driver
• Discrete packaged devices of same die: 2SK1300, 2SK1305