3SK321
器件描述：Silicon N-Channel Dual Gate MOS FET
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：59.19KB，共10页
Sponsor by e络盟器件资料摘要：
3SK321
Silicon N-Channel Dual Gate MOS FET
ADE-208-711A (Z)
2nd. Edition
Dec. 1998
Application
UHF RF amplifier
Features
• Low noise figure.
NF = 2.0 dB typ. at f = 900 MHz
• Capable of low voltage operation
• Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
MPAK-4R
2
1
4
3
1. Source
2. Drain
3. Gate2
4. Gate1
Silicon N-Channel Dual Gate MOS FET
ADE-208-711A (Z)
2nd. Edition
Dec. 1998
Application
UHF RF amplifier
Features
• Low noise figure.
NF = 2.0 dB typ. at f = 900 MHz
• Capable of low voltage operation
• Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
MPAK-4R
2
1
4
3
1. Source
2. Drain
3. Gate2
4. Gate1