© 1993
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK255
FEATURES
• Low VDD Use : (VDS = 3.5 V)
• Driving Battery
• Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz)
• High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz)
• Suitable for uses as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
• Small Package : 4 Pins Super Mini Mold
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSX 18 V
Gate1 to Source Voltage VG1S ±8
*1
V
Gate2 to Source Voltage VG2S ±8
*1
V
Gate1 to Drain Voltage VG1D 18 V
Gate2 to Drain Voltage VG2D 18 V
Drain Current ID 25 mA
Total Power Dissipation PD 130 mW
Channel Temperature Tch 125 °C
Storage Temperature Tstg –55 to +125 °C
*1: RL ≥ 10 kΩ
*2: Free air
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
RF AMPLIFIER FOR UHF TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS SUPER MINI MOLD
Document No. P10586EJ3V0DS00 (3rd edition)
Date Published June 1996 P
Printed in Japan
2.1±0.2
1.25±0.1
2 3
1 4
2.0±0.2
1.25
0.65
0.60
+0.1 –0.05
0.3
+0.1 –0.05
0.4
(1.3)
+0.1 –0.05
0.3
+0.1 –0.05
0.3
0.9±0.1
0.3
0 to 0.1
+0.1 –0.05
0.15
PACKAGE DIMENSIONS
(Unit: mm)
PIN CONNECTIONS
1. Source
2. Drain
3. Gate2
4. Gate1