© 1993
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK253
FEATURES
• Low VDD Use : (VDS = 3.5 V)
• Driving Battery
• Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz)
• High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz)
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
• Package : 4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSX 18 V
Gate1 to Source Voltage VG1S ±8
*1
V
Gate2 to Source Voltage VG2S ±8
*1
V
Gate1 to Drain Voltage VG1D 18 V
Gate2 to Drain Voltage VG2D 18 V
Drain Current ID 25 mA
Total Power Dissipation PD 200
*2
mW
Channel Temperature Tch 125 °C
Storage Temperature Tstg –55 to +125 °C
*1: RL ≥ 10 kΩ
*2: Free air
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
fields.
RF AMPLIFIER FOR UHF TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
2 3
1 4
2.9±0.2
(1.8)
0.95
0.85
+0.1 –
0.05
0.4
+0.1 –
0.05
0.6
(1.9)
+0.1 –
0.05
0.4
+0.1 –
0.05
0.4
0.8
0 to 0.1
+0.1 –
0.06
0.16
PACKAGE DIMENSIONS
(Unit: mm)
PIN CONNECTIONS
1. Source
2. Drain
3. Gate2
4. Gate1
+0.2
–0.3
2.8
+0.2
–0.1
1.5
+0.2 –
0.1
1.1
5°
5°
5°
5°
Document No. P10583EJ2V0DS00 (2nd edition)
(Previous No. TD-2372)
Date Published August 1995 P
Printed in Japan