© 1993
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK252
FEATURES
• Low VDD Use : (VDS = 3.5 V)
• Driving Battery
• Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz)
NF2 = 0.8 dB TYP. (f = 55 MHz)
• High Power Gain : GPS = 19.0 dB TYP. (f = 470 MHz)
• Suitable for use as RF amplifier in CATV tuner.
• Automatically Mounting : Embossed Type Taping
• Package : 4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSX 18 V
Gate1 to Source Voltage VG1S ±8
*1
V
Gate2 to Source Voltage VG2S ±8
*1
V
Gate1 to Drain Voltage VG1D 18 V
Gate2 to Drain Voltage VG2D 18 V
Drain Current ID 25 mA
Total Power Dissipation PD 200
*2
mW
Channel Temperature Tch 125 °C
Storage Temperature Tstg –55 to +125 °C
*1: RL ≥ 10 kΩ
*2: Free air
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
RF AMPLIFIER FOR CATV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
0.16
0.1 0.05
5˚ 5˚
0.4
0.4
0.1 0.05
2.8
0.2
0.3
1.5
0.2
0.1
+ –
+
–
+
–
0.1 0.05
+ –
32
2.9 ± 0.2
(1.8)
0.85
0.95
(1.9)
41
0.40.6
0.1 0.05
+ –
0.1 0.05
+ –
1.1
0.2 0.1
+ –
0.8
5˚ 5˚
0
~
0.1
+ –
PACKAGE DIMENSIONS
(Unit: mm)
PIN CONNECTIONS
1. Source
2. Drain
3. Gate2
4. Gate1
Document No. P10582EJ2V0DS00 (2nd edition)
(Previous No. TD-2373)
Date Published August 1995 P
Printed in Japan