© 1993
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK222
FEATURES
• The Characteristic of Cross-Modulation is good.
CM = 92 dBµ TYP. @ f = 200 MHz, GR = –30 dB
• Low Noise Figure: NF1 = 1.2 dB TYP. (f = 200 MHz)
NF2 = 1.0 dB TYP. (f = 55 MHz)
• High Power Gain: GPS = 23 dB TYP. (f = 200 MHz)
• Enhancement Type.
• Suitable for use as RF amplifier in FM tuner and VHF TV tuner.
• Automatically Mounting: Embossed Type Taping
• Small Package: 4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSX 18 V
Gate1 to Source Voltage VG1S ±8 (±10)
*1
V
Gate2 to Source Voltage VG2S ±8 (±10)
*1
V
Gate1 to Drain Voltage VG1D 18 V
Gate2 to Drain Voltage VG2D 18 V
Drain Current ID 25 mA
Total Power Dissipation PD 200 mW
Channel Temperature Tch 125 °C
Storage Temperature Tstg –55 to +125 °C
*1 RL ≥ 10 kΩ
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
Document No. P10574EJ2V0DS00 (2nd edition)
(Previous No. TD-2267)
Date Published August 1995 P
Printed in Japan
1989
2.8
+0.2
–0.3
1.5
+0.2
–0.1
0.4
+0.1 –0.05
0.4
+0.1 –0.05
(1.9)
0.95
0.85
(1.8)
2.9±0.2
0.6
+0.1 –0.05
0.4
+0.1 –0.05
2 3
1 4
5° 5°
5° 5°
0.8
1.1
+0.2 –0.1
0.16
+0.1 –0.06
0 to 0.1
1. Source
2. Drain
3. Gate 2
4. Gate 1
PACKAGE DIMENSIONS
(Unit: mm)