© 1993
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK223
FEATURES
• The Characteristic of Cross-Modulation is good.
CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB
• Low Noise Figure: NF1 = 2.2 dB TYP. (f = 470 MHz)
NF2 = 0.9 dB TYP. (f = 55 MHz)
• High Power Gain: GPS = 20 dB TYP. (f = 470 MHz)
• Enhancement Type.
• Suitable for use as RF amplifier in CATV tuner.
• Automatically Mounting: Embossed Type Taping
• Small Package: 4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSX 18 V
Gate1 to Source Voltage VG1S ±8 (±10)
*1
V
Gate2 to Source Voltage VG2S ±8 (±10)
*1
V
Gate1 to Drain Voltage VG1D 18 V
Gate2 to Drain Voltage VG2D 18 V
Drain Current ID 25 mA
Total Power Dissipation PD 200 mW
Channel Temperature Tch 125 °C
Storage Temperature Tstg –55 to +125 °C
*1 RL ≥ 10 kΩ
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
RF AMPLIFIER FOR CATV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
Document No. P10575EJ2V0DS00 (2nd edition)
(Previous No. TD-2268)
Date Published August 1995 P
Printed in Japan
1989
PACKAGE DIMENSIONS
(Unit: mm)
2.8
+0.2
–0.3
1.5
+0.2
–0.3
0.4
+0.2 –0.3
32
41
(1.9)(1.8)
2.9±0.2
0.85
0.95
0.4
+0.2 –0.3
0.4
+0.2 –0.3
0.6
+0.2 –0.3 5° 5°
5° 5°
1.1
+0.2 –0.3
0.8
0 to 0.1
0.16
+0.2 –0.3
1. Source
2. Drain
3. Gate 2
4. Gate 1