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3SK177

器件描述:RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD
器件厂商:NEC [NEC]
文件大小:59.33KB,共6页
Sponsor by e络盟
器件资料摘要:
© 1995
DATA SHEET
MES FIELD EFFECT TRANSISTOR
Document No. P10412EJ1V0DS00 (1st edition)
(Previous No. TN-1877)
Date Published August 1995 P
Printed in Japan
3SK177
FEATURES
• Suitable for use as RF amplifier in UHF TV tuner.
• Low Crss : 0.02 pF TYP.
• High GPS : 20 dB TYP.
• Low NF : 1.1 dB TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSX 13 V
Gate 1 to Source Voltage VG1S –4.5 V
Gate2 to Source Voltage VG2S –4.5 V
Drain Current ID 40 mA
Total Power Dissipation PT 200 mW
Channel Temperature Tch 125 ˚C
Storage Temperature Tstg –55 to +125 ˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Drain to Source Breakdown Voltage BVDSX 13 V VG1S = –4 V, VG2S = 0, ID = 10 µA
Drain Current IDSS 52040mAVDS = 5 V, VG2S = 0, VG1S = 0
Gate1 to Source Cutoff Voltage VG1S(off) –3.5 V VDS = 5 V, VG2S = 0, ID = 100 µA
Gate2 TO Source Cutoff Voltage VG2S(off) –3.5 V VDS = 5 V, VG1S = 0, ID = 100 µA
Gate1 Reverse Current IG1SS 10 µAVDS = 0, VG1S = –4 V, VG2S = 0
Gate2 Reverse Current IG2SS 10 µAVDS = 0, VG2S = –4 V, VG1S = 0
Forward Transter Admittance | yfs | 182535msVDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 1.0 kHz
Input Capacitance Ciss 0.5 1.0 1.5 pF VDS = 5 V, VG2S = 1 V, ID = 10 mA,
Reverse Transfer Capacitance Crss 0.02 0.03 pF
f = 1 MHz
Power Gain GPS 16.0 20.0 dB VDS = 5 V, VG2S = 1 V, ID = 10 mA,
Noise Figure NF 1.1 2.5 dB
f = 900 MHz
IDSS Classification Unit: mA
Class U71 U72 U73 U74
Marking U71 U72 U73 U74
IDSS 5 to 15 10 to 25 20 to 35 30 to 40
RF AMP. FOR UHF TV TUNER
N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR
4 PIN MINI MOLD
2.8–0.3
+0.2
1.5–0.1
+0.2
0.4
–0.05 +0.1
29.02
(1.8)
0.85
0.95
2
1
3
4
0.4
–0.05 +0.1
(1.9)
0.16
–0.06 +0.1
0.4
–0.05 +0.1
1.1
–0.1 +0.2
0.6
–0.05 +0.1
0.8
0 to 0.1
5˚ 5˚
5˚ 5˚
1. Source
2. Drain
3. Gate 2
4. Gate 1
PACKAGE DIMENSIONS
in millimeters