Description
The 3SK166A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. The
circuit matching is easier to be made for all UHF
band, resulting in the excellent performance, due to
the optimal design of input impedance.
Features
• Low voltage operation
• Low noise: NF = 1.2dB (typ.) at 800MHz
• High gain: Ga = 20dB (typ) at 800MHz
• High stability
Application
UHF band amplifier, oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage VDSX 8V
Gate 1 to source voltage VG1S –6 V
• Gate 2 to source voltage VG2S –6 V
• Drain current ID 80 mA
• Allowable power dissipation PD 150 mW
• Channel temperature Tch 150 °C
• Storage temperature Tstg –55 to +150 °C
– 1 –
3SK166A
E96Y11-PS
GaAs N-channel Dual Gate MES FET
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.