© 1995
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
Document No. P10411EJ1V0DS00 (1st edition)
(Previous No. TN-1758)
Date Published August 1995 P
Printed in Japan
3SK135A
FEATURES
• Suitable for use as RF amplifier in UHF TV tuner.
• Low Crss : 0.02 pF TYP.
• High Gps : 18 dB TYP.
• Low NF : 2.7 dB TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSX 20 V
Gate1 to Source Voltage VG1S* ±10 V
Gate2 to Source Voltage VG2S* ±10 V
Drain Current ID 25 mA
Total Power Dissipation PT 200 mW
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
*RL ≥ 10 kΩ
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Drain to Source Breakdown Voltage BVDSX 20 V VG1S = VG2S = –2 V, ID = 10 µA
Drain Current IDSS 0.01 6 mA VDS = 5 V, VG2S = 4 V, VG1S = 0
Gate1 to Source Cutoff Voltage VG1S(off) –2.0 V VDS = 10 V, VG2S = 4 V, ID = 10 µA
Gate2 to Source Cutoff Voltage VG2S(off) –0.7 V VDS = 10 V, VG1S = 4 V, ID = 10 µA
Gate1 Reverse Current IG1SS ±20 nA VDS = 0, VG1S = ±8 V, VG2S = 0
Gate2 Reverse Current IG2SS ±20 nA VDS = 0, VG2S = ±8 V, VG1S = 0
Forward Transter Admittance | yfs |1418 msVDS = 5 V, VG2S = 4 V, ID = 10 mA,
f = 1 kHz
Input Capacitance Ciss 1.5 2.5 pF VDS = 10 V, VG2S = 4 V,
Output capacitance Coss 0.5 1.0 1.5 pF
ID = 10 mA, f = 1 MHz
Reverse Transfer Capacitance Crss 0.02 0.03 pF
Power Gain Gps* 16 18 dB VDS = 10 V, VG2S = 4 V, ID = 10 mA,
Noise Figure NF* 2.7 4.5 dB
f = 900 MHz
IDSS Classification
Class L/LS* K/KS*
Marking U65 U66
IDSS 0.01 to 2 1 to 6
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4PIN MINI MOLD
PACKAGE DIMENSIONS
in millimeters
* Old specification/New specification
2.8–0.3
+0.2
1.5–0.1
+0.2
0.4
–0.05 +0.1
2.9±0.2
(1.9)
0.95
0.95
2
1
3
4
0.4–0.05
+0.1
(1.9)
0.16
–0.06 +0.1
0.4–0.05
+0.1
1.1
–0.1 +0.2
0.6
–0.05 +0.1
0.8
0 to 0.1
5˚ 5˚
5˚ 5˚
1. Source
2. Drain
3. Gate 2
4. Gate 1