Dual P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
3N190 / 3N191
FEATURES
•
Very High Input Impedance
•
High Gate Breakdown 3N190-3N191
•
Low Capacitance
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Drain-Source or Drain-Gate Voltage (Note 1)
3N190, 3N191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Transient Gate-Source Voltage (Note 1 and 2) . . . . . . . ±125V
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V
Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature. . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation
One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW
Total Derating above 25
o
C. . . . . . . . . . . . . . . . . . 4.2mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package Temperature Range
3N190-91 Hermetic TO-99 -55
o
C to +150
o
C
X3N190-91 Sorted Chips in Carriers -55
o
C to +150
o
C
CORPORATION
PIN CONFIGURATION
S2
G1
D2
D1
G2
S1
C
TO-99
2506
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL PARAMETER
3N190/91
UNITS TEST CONDITIONS
MIN MAX
IGSSR Gate Reverse Current 10
pA
VGS = 40V
IGSSF Gate Forward Current
-10 VGS = -40V
-25 TA = +125
o
C
BVDSS Drain-Source Breakdown Voltage -40
V
ID = -10µA
BVSDS Source-Drain Breakdown Voltage -40 IS = -10µA, VBD = 0
VGS(th) Threshold Voltage
-2.0 -5.0 VDS = -15V, ID = -10µA
-2.0 -5.0 VDS = VGS, ID = -10µA
VGS Gate Source Voltage -3.0 -6.5 VDS = -15V, ID = -500µA
IDSS Zero Gate Voltage Drain Current -200 VDS = -15V
ISDS Source Drain Current -400 VSD = -15V, VDB = 0
rDS(on) Drain-Source on Resistance 300 ohms VDS = -20V, ID = -100µA
ID(on) On Drain Current -5.0 -30.0 mA VDS = -15V, VGS = -10V