Monolithic Dual P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
3N165 / 3N166
FEATURES
•
Very High Impedance
•
High Gate Breakdown
•
Low Capacitance
ABSOLUTE MAXIMUM RATINGS (Note 1)
(T
A
= 25
o
C unless otherwise specified)
Drain-Source or Drain-Gate Voltage (Note 2)
3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
3N166. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Transient Gate-Source Voltage (Note 3) . . . . . . . . . . . . . ±125
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V
Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature. . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation
One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW
Total Derating above 25
o
C. . . . . . . . . . . . . . . . . . 4.2mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package Temperature Range
3N165-66 Hermetic TO-99 -55
o
C to +150
o
C
X3N165-66 Sorted Chips in Carriers -55
o
C to +150
o
C
CORPORATION
G1
D2
D1
G2
C
TO-99
S
2506
PIN CONFIGURATION
DEVICE SCHEMATIC
5
1
3
48
7
0190
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS
IGSSR Gate Reverse Leakage Current 10
pA
VGS = 40V
IGSSF Gate Forward Leakage Current
-10 VGS = -40V
-25 TA = +125
o
C
IDSS Drain to Source Leakage Current -200 VDS = -20V
ISDS Source to Drain Leakage Current -400 VSD = -20V, VDB = 0
ID(on) On Drain Current -5 -30 mA VDS = -15V, VGS = -10V
VGS(th) Gate Source Threshold Voltage -2 -5
V
VDS = -15V, ID = -10µA
VGS(th) Gate Source Threshold Voltage -2 -5 VDS = VGS, ID = -10µA
rDS(on) Drain Source ON Resistance 300 ohms VGS = -20V, ID = -100µA
BOTTOM VIEW
S
C
0180
D
2
G
2
G
1
D
1