2SK3390
器件描述：Silicon N Channel MOS FET UHF Power Amplifier
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：78.47KB，共7页
Sponsor by e络盟器件资料摘要：
2SK3390
Silicon N Channel MOS FET
UHF Power Amplifier
ADE-208-846 (Z)
1st. Edition
Aug.2001
Features
• High power output, High gain, High efficiency
PG = 17 dB, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz)
• Compact package capable of surface mounting
Outline
RP8P
1
2
3
1. Gate
2. Source
3. Drain
D
G
S
1
2
3
Note: Marking is “IX”.
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
Silicon N Channel MOS FET
UHF Power Amplifier
ADE-208-846 (Z)
1st. Edition
Aug.2001
Features
• High power output, High gain, High efficiency
PG = 17 dB, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz)
• Compact package capable of surface mounting
Outline
RP8P
1
2
3
1. Gate
2. Source
3. Drain
D
G
S
1
2
3
Note: Marking is “IX”.
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.