1
Item Symbol Rating Unit
Drain-source voltage VDS 30
Continuous drain current ID ±50
Pulsed drain current ID(puls] ±200
Gate-source voltage VGS ±16
Maximum Avalanche Energy EAV *1 1735
Max. power dissipation PD 80
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3363-01 FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=30V
VGS=±16V
ID=50A VGS=4V
ID=50A VGS=10V
ID=50A VDS=25V
VCC=15V ID=100A
VGS=10V
RGS=10 W
Min. Typ. Max. Units
V
V
µA
mA
nA
mW
S
pF
A
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
1.56
75.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
Tch=25°C
VGS=0V Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
L=100µH Tch=25°C
IF=50A VGS=0V Tch=25°C
IF=50A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
A
A
V
mJ
W
°C
°C
*1 L=0.925mH, Vcc=12V
30
1.0 1.5 2.0
10 500
0.2 1.0
10 100
8.0 10.5
5.3 6.8
35 70
3900 5850
2000 3000
850 1280
17 30
70 110
250 380
180 270
50
1.0 1.5
65
0.12
-55 to +150
TO-220AB
3. Source