2SK3380
器件描述：Silicon N Channel MOS FET High Speed Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：26.12KB，共5页
Sponsor by e络盟器件资料摘要：
2SK3380
Silicon N Channel MOS FET
High Speed Switching
ADE-208-806 (Z)
1st.Edition.
June 1999
Features
• Low on-resistance
R
DS
=1.26 W typ. (V
GS
= 10 V , I
D
= 150 mA)
R
DS
= 2.8 W typ. (V
GS
= 4 V , I
D
= 50 mA)
• 4 V gate drive device.
Outline
1. Source
2. Drain
3. Gate
SPAK
D
S
G
1
2
3
Silicon N Channel MOS FET
High Speed Switching
ADE-208-806 (Z)
1st.Edition.
June 1999
Features
• Low on-resistance
R
DS
=1.26 W typ. (V
GS
= 10 V , I
D
= 150 mA)
R
DS
= 2.8 W typ. (V
GS
= 4 V , I
D
= 50 mA)
• 4 V gate drive device.
Outline
1. Source
2. Drain
3. Gate
SPAK
D
S
G
1
2
3