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©

1999
MOS FIELD EFFECT TRANSISTOR
2SK3365
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D14255EJ1V0DS00 (1st edition)
Date Published September 1999 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3365 is N-Channel MOS Field Effect Transistor
designed for DC/DC converters application of notebook
computers.
FEATURES
• Low on-resistance
RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A)
RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A)
RDS(on)3 = 29 mΩ (MAX.) (VGS = 4.0 V, ID = 15 A)
• Low Ciss : Ciss = 1300 pF (TYP.)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V) VDSS 30 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) ID(DC) ±30 A
Drain Current (Pulse)
Note
ID(pulse) ±120 A
Total Power Dissipation (TC = 25 °C) PT 36 W
Total Power Dissipation (TA = 25 °C) PT 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to + 150 °C
Note PW ≤ 10 µs, Duty cycle ≤ 1 %
THERMAL RESISTANCE
Channel to case Rth(ch-C) 3.48 °C/W
Channel to ambient Rth(ch-A) 125 °C/W
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3365 TO-251
2SK3365-Z TO-252