©

1999
MOS FIELD EFFECT TRANSISTOR
2SK3356
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D14133EJ1V0DS00 (1st edition)
Date Published August 1999 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark a35 shows major revised points.
DESCRIPTION
The 2SK3356 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 38 A)
RDS(on)2 = 12 mΩ MAX. (VGS = 4 V, ID = 38 A)
• Low Ciss: Ciss = 6300 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS(AC) ±20 V
Drain Current (DC) ID(DC) ±75 A
Drain Current (pulse)
Note1
ID(pulse) ±300 A
Total Power Dissipation (TC = 25°C) PT 130 W
Total Power Dissipation (TA = 25°C) PT 3.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 55 A
Single Avalanche Energy
Note2
EAS 302 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case Rth(ch-C) 0.93 °C/W
Channel to Ambient Rth(ch-A) 41.7 °C/W
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3356 TO-3P
a35
a35
a35
a35
a35
a35
a35