2SK3349
器件描述：Silicon N Channel MOS FET High Speed Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：39.34KB，共8页
Sponsor by e络盟器件资料摘要：
2SK3349
Silicon N Channel MOS FET
High Speed Switching
ADE-208-804 (Z)
1st.Edition.
June 1999
Features
• Low on-resistance
R
DS
= 2.8 W typ. (at V
GS
= 4 V , I
D
= 25 mA)
R
DS
= 4.8 W typ. (at V
GS
= 2.5 V , I
D
= 10 mA)
• 2.5 V gate drive device
• Small package (SMPAK)
Outline
1. Source
2. Gate
3. Drain
SMPAK
1
2
3
D
S
G
Silicon N Channel MOS FET
High Speed Switching
ADE-208-804 (Z)
1st.Edition.
June 1999
Features
• Low on-resistance
R
DS
= 2.8 W typ. (at V
GS
= 4 V , I
D
= 25 mA)
R
DS
= 4.8 W typ. (at V
GS
= 2.5 V , I
D
= 10 mA)
• 2.5 V gate drive device
• Small package (SMPAK)
Outline
1. Source
2. Gate
3. Drain
SMPAK
1
2
3
D
S
G