1
Item Symbol Rating Unit
Drain-source voltage VDS 400
Continuous drain current ID ±23
Pulsed drain current ID(puls] ±92
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 23
Maximum Avalanche Energy EAV *1 545
Max. power dissipation PD 295
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3340-01 FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=400V
VGS=±30V
ID=11.5A VGS=10V
ID=11.5A VDS=25V
VCC=300V ID=23A
VGS=10V
RGS=10 W
Min. Typ. Max. Units
V
V
µA
mA
nA
W
S
pF
nC
A
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
0.424
50.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total gate charge
Gate-Source charge
Gete-Drain charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
Tch=25°C
VGS=0V Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
Vcc=200V
ID=23A
VGS=10V
L=1.89mH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs
Tch=25°C
V
A
A
V
A
mJ
W
°C
*1 L=1.89mH, Vcc=40V *2 Tch=150°C
400
2.5 3.0 3.5
10 500
0.2 1.0
10 100
0.16 0.2
8.5 17
2650 3975
500 750
230 345
22 35
105 160
225 340
120 180
137 210
36 55
48 75
23
1.15 1.73
450
8.6
-55 to +150
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Gate(G)
Source(S)
Drain(D)