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©

1999
MOS FIELD EFFECT TRANSISTOR
2SK3324
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D14203EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3324 is N-Channel MOS FET device that features a
Low gate charge and excellent switching characteristics, and
Designed for high voltage applications such as switching
power supply, AC adapter.
FEATURES
• Low gate charge :
QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
• Gate voltage rating : ±30 V
• Low on-state resistance :
RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSS 900 V
Gate to Source Voltage VGSS(AC) ±30 V
Drain Current (DC) ID(DC) ±6 A
Drain Current (Pulse)
Note1
ID(pulse) ±18 A
Total Power Dissipation (TC = 25°C) PT 120 W
Total Power Dissipation (TA = 25°C) PT 3.0 W
Storage Temperature Tstg –55 to + 150 °C
Single Avalanche Current
Note2
IAS 6.0 A
Single Avalanche Energy
Note2
EAS 21.6 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3324 TO-3P
(TO-3P)
The mark  shows major revised points.