The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©

2000
MOS FIELD EFFECT TRANSISTOR
2SK3326
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D14204EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3326 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
• Low gate charge :
QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
• Gate voltage rating : ±30 V
• Low on-state resistance :
RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.0 A)
• Avalanche capability ratings
• Isolated TO-220(MP-45F) package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 500 V
Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±30 V
Drain Current (DC) ID(DC) ±10 A
Drain Current (pulse)
Note1
ID(pulse) ±40 A
Total Power Dissipation (TC = 25°C) PT 40 W
Total Power Dissipation (TA = 25°C) PT 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 10 A
Single Avalanche Energy
Note2
EAS 10.7 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3326 Isolated TO-220
(Isolated TO-220)