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MOS FIELD EFFECT TRANSISTOR
2SK3322
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D14114EJ2V0DS00 (2nd edition)
Date Published August 2003 NS CP(K)
Printed in Japan
1999, 2000
The mark ★ shows major revised points.

DESCRIPTION
The 2SK3322 is N-Channel DMOS FET device that
features a low gate charge and excellent switching
characteristics, and designed for high voltage
applications such as switching power supply, AC
adapter.

FEATURES
• Low gate charge :
QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.5 A)
• Gate voltage rating : ±30 V
• Low on-state resistance :
RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.8 A)
• Avalanche capability ratings
• Surface mount package available

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
600 V
Gate to Source Voltage (VDS = 0 V) VGSS
±30 V
Drain Current (DC) (TC = 25°C) ID(DC)
±5.5 A
Drain Current (pulse)
Note1
ID(pulse)
±20 A
Total Power Dissipation (TA = 25°C) PT1
1.5 W
Total Power Dissipation (TC = 25°C) PT2
65 W
Channel Temperature Tch
150 °C
Storage Temperature Tstg
−55 to +150 °C
Single Avalanche Current
Note2
IAS
4.0 A
Single Avalanche Energy
Note2
EAS
10.7 mJ

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V

ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3322 TO-220AB (MP-25)
2SK3322-S TO-262
2SK3322-ZJ TO-263(MP-25ZJ)
2SK3322-ZK TO-263(MP-25ZK)
★
★