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©

1999
MOS FIELD EFFECT TRANSISTOR
2SK3306
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D14004EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark a35 shows major revised points.
DESCRIPTION
The 2SK3306 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
• Low gate charge :
QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)
• Gate voltage rating : ±30 V
• Low on-state resistance :
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)
• Avalanche capability ratings
• Isolated TO-220(MP-45F) package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 500 V
Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±30 V
Drain Current (DC) ID(DC) ±5A
Drain Current (pulse)
Note1
ID(pulse) ±20 A
Total Power Dissipation (TC = 25°C) PT 35 W
Total Power Dissipation (TA = 25°C) PT 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 5.0 A
Single Avalanche Energy
Note2
EAS 125 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3306 Isolated TO-220 (MP-45F)
(Isolated TO-220)
a35